R.Kawakami, M.Yuki, A.Shirai, S.Yanagiya, M.Niibe, Y.Nakano, T.Mukai: “Photobactericidal Activity of Anatase Titanium Dioxide Nanoparticles Annealed with the Assistance of Nonequilibrium Atmospheric-Pressure Oxygen Plasma”, 42nd International Symposium on Dry Process (DPS2021), Tokyo, November (2021).
M.Yuki, R.Kawakami, S.Yanagiya, M.Niibe, Y.Nakano, T.Mukai: “Nonequilibrium Atmospheric-Pressure O2 Plasma-Assisted Annealing Effect on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles”, 42nd International Symposium on Dry Process (DPS2021), Tokyo, November (2021).
A.Toyotome, Y.Nakano: “Intrinsic Defect Investigation of n-Type b-Ga2O3 Single Crystals Treated by High-Temperature Annealing in Vacuum”, 8th International Symposium on Organic and Inorganic Materials and Related Nanotechnologies (EM-NANO2021), Toyama, June (2021).
Y.Nakano, A.Toyotome, R.Suzuki, Y.Yasuda: “Annealing behavior of deep-level defects in unintentionally doped n-type b-Ga2O3 single crystal”, 12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021) , Nagoya, March (2021).
A.Toyotome, Y.Nakano, R.Kawakami, M.Niibe: “Electrical Damage Introduced into p-GaN Films by Ar Plasma Treatments”, 12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021) , Nagoya, March (2021).
H.Suzuki, S.Hishiki, K.Kawamura, Y.Nakano: “Electrical Investigation of Turn-On Capacitance Recovery Characteristics in Auto or External Carbon-doped AlGaN/GaN/SiC/Si”, 12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021) , Nagoya, March (2021).
H.Suzuki, S.Hishiki, K.Kawamura, Y.Nakano: “Turn-on Capacitance Recovery CharacteristicsEvaluation in AlGaN/GaN/SiC/Si that have a highvertical breakdown voltage”, 12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 13th International Conference on Plasma Nanotechnology and Science (ISPlasma2020/IC-PLANTS2020) , Nagoya, March (2020).
A.Toyotome, Y.Nakano: “Deep-Level Defect Investigation of Si-Doped β-Ga2O3 Homoepitaxial Films Grown by Halide Vapor Phase Epitaxy”, 11th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-11), Nara, October (2019).
R.Kawakami, H.Koide, Y.Yoshitani, S.Yanagiya, T.Okamoto, M.Haraguchi, A.Furube, M.Niibe, Y.Nakano, C.Azuma, T.Mukai: “Photocatalytic Characteristics of Au/TiO2/Au Nanostructure Induced by Ultraviolet Irradiation”, 15th International Symposium of Sputtering & Plasma Processes (ISSP2019), Kanazawa, June (2019).
Y.Nakano, A.Toyotome: “Electrical Characterization of Si-Doped b-Ga2O3 Homoepitaxial Films Grown by Halide Vapor Phase Epitaxy”, 7th International Symposium on Organic and Inorganic Materials and Related Nanotechnologies (EM-NANO2019), Nagano, June (2019).
Y.Nakano, A.Toyotome: “Electrical Damage Introduced into p-GaN Films by Ar Plasma Treatments”, 7th International Symposium on Organic and Inorganic Materials and Related Nanotechnologies (EM-NANO2019), Nagano, June (2019).
Y.Nakano, A.Toyotome: “Deep-Level Defect Investigation of Si-Doped b-Ga2O3 Homoepitaxial Films Grown by Halide Vapor Phase Epitaxy”, the 2019-edition of Compound Semiconductor Week (CSW2019), Nara, May (2019).
R.Kawakami, Y.Yoshitani, K.Mitani, N.Takami, H.Koide, N.Sugimoto, M.Niibe, Y.Nakano, C.Azuma, T.Mukai: “Hydrophilic Modification of Polypropylene Film Surfaces Treated by Atmospheric-Pressure Air Plasma Jet”, 40th International Symposium of Dry Process (DPS 2018), Nagoya, November (2018).
Y.Yoshitani, R.Kawakami, H.Koide, N.Takami, M.Niibe, Y.Nakano, C.Azuma, T.Mukai Takashi:”Effect of Atmospheric-Pressure O2 Plasma-Assisted Annealing on Photocatalytic Activity of TiO2 Nanoparticles”, 40th International Symposium of Dry Process (DPS 2018), Nagoya, November (2018).
M.Niibe, R.Tanaka, R.Kawakami, Y.Nakano, T.Mukai: “Surface Structure Analysis of AlGaN Thin Films Damaged by Oxygen and Nitrogen Plasmas”, The 8th International Symposium on Surface Science (ISSS-8), Tsukuba. October (2017).
Y.Nakano: “Electrical Investigation of Bulk-Related Current Collapses in AlGaN/GaN/GaN:C Hetero-Structures Grown on Si Substrates”, The 29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, August (2018).
Y.Nakano, M.Niibe, R.Kawakami: “Generation Behavior of Electrical Damage Introduced into n-GaN Films by CF4 Plasma Treatments”, The 29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, August (2018).
Y.Nakano: “Electrical Investigation of p-GaN Film Homo-Epitaxially Grown on Free-Standing GaN Substrate”, The 29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, August (2018).
Y.Nakano: “Electrical Characterization of b-Ga2O3 Single Crystal Substrate”, The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2017), Fukui, June (2017)
Y.Nakano:”Electrical Characterization of p-GaN Film Homo-Epitaxially Grown on Free-Standing GaN Substrate”, The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2017), Fukui, June (2017).
A.Chikamatsu, Y.Nalano: “Bulk-Related Current Collapses in Carbon-Doped AlGaN/GaN/GaN:C Hetero-Structures Grown on Si Substrates”, The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2017), Fukui, June (2017).
Y.Nakano, M.Niibe, R.Kawakami: “Electrical Damage Introduced into n-GaN Films by CF4 Plasma Treatments”, 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 10th International Conference on Plasma-Nano Technology & Science (ISPlasma2017/IC-PLANTS2017), Kasugai, March (2017).
D.Ogawa, Y.Banno, Y.Nakano, K.Nakamura: “Damage development of gallium nitride under plasma exposure”, 69th Annual Gaseous Electronics Conference, Bochum (Germany), October (2016).
D.Ogawa, Y.Banno, Y.Nakano, K.Nakamura: “Damage Monitoring of GaN Film for Material Processing”, AVS 63rd International Symposium, Music City Center, Tennessee (USA), Novemver (2016).
Y.Nakano, M.Niibe, R.Kawakami: “Electrical Damage Investigation of n-GaN Films Treated by CF4 Plasma”, 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, June (2016).
R.Kawakami, M.Niibe, Y.Nakano, T.Mukai: “Effect of Ultraviolet Light-Assisted CF4 Plasma Irradiation on AlGaN Thin Film Surface”, 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, June (2016).
D.Ogawa, Y.Banno, Y.Nakano, K.Nakamura: “Photoluminescence of GaN Film Exposed to Chlorine-Containing Plasma”, 68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing , (2015.10, Hawaii).
M.Kato, N.Ichikawa, M.Ichimura, Y.Nakano: “Deep level characterization for p‐type SiC photocathodes”, International Conference on Silicon Carbide and Related Materials (ISCRM-2015), Giardini Naxos (Italy), October (2015).
Y.Nakano, R.Kawakami, M.Niibe, T.Shirahama, T.Mukai: “A Relation between Pinch-Off Voltages and Deep-Level Defects in AlGaN/GaN Hetero-Structures Treated by CF4 Plasma”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing (China), September (2015).
Y.Nakano, Y.Irokawa, M.Sumiya, S.Yagi, H.Kawai: “Carbon-Related Deep-Level Defects and Carrier Trapping Characteristics in AlGaN/GaN Hetero-Structures”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing (China), September (2015).
Y.Nakano, D.Ogawa, K.Nakamura, R.Kawakami, M.Niibe: “Ar+-Irradiation Induced Damage in Metal-Organic Vapor Phase Epitaxy GaN”, The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015), Niigata, June (2015).
Y.Nakano, D.Ogawa, K.Nakamura, R.Kawakami, M.Niibe: “Ar+-Irradiation Induced Damage in Hydride Vapor-Phase Epitaxy GaN”, The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015), Nigata, June (2015).
Y.Nakano, Y.Irokawa, M.Sumiya, S.Yagi, H.Kawai: “Carbon-Related Deep-Level Defects and Carrier-Trapping Characteristics in AlGaN/GaN Hetero-Structures”, 7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015/IC-PLANTS2015), Nagoya, March 28 (2015).
Y.Nakano, M.Chen, D.Ogawa, K.Nakamura, R.Kawakami, M.Niibe: “Generation Behavior of Deep-Level Defects in Ar+-Irradiated GaN”, 7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015/IC-PLANTS2015), Nagoya, March 28 (2015).
M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Mukai: “Etching Damage Analysis of n-GaN Crystals Etched with N2-Plasma Using Soft X-Ray Absorption Spectroscopy”, International Symposium of Dry Process 2014, Tokyo, November (2014).
R.Kawakami, M.Niibe, Y.Nakano, T.Shirahama, S.Hirai, T.Mukai: “Morphological and Compositional Changes in AlGaN Surfaces Etched by RF Capacitively Coupled Carbon Tetrafluoride and Argon Plasmas”, International Symposium of Dry Process 2014, Tokyo, November (2014).
D.Ogawa, Y.Nakano, K.Nakamura:“Effect of Liquid Nitrogen Cooling on GaN Film Exposed in Low Pressure Plasma”, International Symposium of Dry Process 2014, November (2014).
S.Hirai, M.Niibe, T.Shirahama, R.Kawakami, Y.Nakano, T.Mukai: “Surface Analysis of Thick AlGaN Films Treated by Ar and CF4 Plasma Etching”, The 7th International Symposium on Surface Science (ISSS-7), Matsue, Nov. (2014).
M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Mukai: “Damage Characteristics of n-GaN Crystal Etched with N2 Plasma by Soft X-ray Absorption Spectroscopy”, The 7th International Symposium on Surface Science (ISSS-7), Matsue, Nov. (2014).
K.Sano, M.Niibe, R.Kawakami, Y.Nakano: “Spectral Recovery of Etching Damage of TiO2 Thin Films Observed in XAS Spectra”,
The 7th International Symposium on Surface Science (ISSS-7), Matsue, Nov. (2014).
F.Hasegawa, Y.Nakano, T.Honda, M.Sumiya: “Influence of GaN/InGaN Hetero Interface on an InGaN Solar Cell”, International Workshop on Nitride Semiconductors (IWN 2014), Wroclaw Poland, August 25 (2014).
M.Sumiya, L.Sang, F.Hasegawa, Y.Nakano, “Effect of Strain on Solar Cell Performance for GaN/InGaN/GaN Structures”, International Workshop on Nitride Semiconductors (IWN 2014), Wroclaw Poland, August 25 (2014).
Y.Nakano, Y.Irokawa, M.Sumiya, Y.Sumida, S.Yagi, H.Kawai: “Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures Containing Various Carbon Concentrations”, 2013 Materials Research Society Fall meeting (2013.12, Boston, USA).
Y.Nakano, L.Sang, M.Sumiya, F.Hasegawa: “Electrical Characterization of p-i-n Junction Based on Thick i-InGaN Film for Photovoltaic Applications”, 2013 Materials Research Society Fall meeting (2013.12, Boston, USA).
Y.Nakano, L.Sang, M.Sumiya: “Deep-Level Characterization of Thick InGaN Films with Various In Contents for Photovoltaic Applications”, 2013 Materials Research Society Fall meeting (2013.12, Boston, USA).
Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: “Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures”, 10th Topical Workshop on Heterostructure Microelectronics (2013.9, Hakodate).
Y.Nakano, M.Niibe, M.Lozac’h, L.Sang, M.Sumiya: “Electrical Investigation of p-i-n Junction Based on Thick i-InGaN Film”, 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2013.6, Kanazawa).
Y.Nakano, M.Niibe, M.Lozac’h, L.Sang, M.Sumiya: “Electrical Characterization of Thick InGaN Films with Various In Contents for Photovoltaic Applications”, 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2013.6, Kanazawa).
R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, T.Shirahama, K.Tominaga, T.Mukai: “Damage Characteristics of n-GaN Thin Film Surfaces Etched by Ultraviolet Light-assisted Helium Plasmas”, 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2013.6, Kanazawa).
M.Niibe, K.Sano, T.Kotaka, R.Kawakami, K.Tominaga, Y.Nakano: “Etching Damage and Its Recovery by Soft X-ray Irradiation Observed in Soft X-ray Absorption Spectra of TiO2 Thin Film”, 38th International Conference on International conference on Vacuum Ultraviolet and X-ray Physics (2013.7, China).
M.Sumiya, Y.Nakano, L.Sang, M.Lozac’h, F.Hasegawa: “Electrical characterization of InGaN p-i-n junction and solar cell property”, 6th Asia-Pacific Workshop on Widegap Semiconductor (2013.5, Taiwan)
R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, T.Shirahama, T. Yamada, K. Tominaga, T. Mukai: “Damage Characteristics of n-GaN Thin Film Surfaces Etched by N2 Plasmas”, International Symposium on Compound Semiconductors 2013 (2013.5, Kobe).
Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: “Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures”, 40th International Symposium on Compound Semiconductors (2013.5, Kobe).
Y.Nakano, K.Nakamura, M.Niibe, R.Kawakami, N.Ito, T.Kotaka, K.Tominaga: “Effect of UV Irradiation on Ar-Plasma Etching Characteristics of GaN”, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2013.1, Nagoya).
M.Chen, K.Nakamura, Y.Nakano, H.Sugai: “In-situ photo luminescence observation of GaN thin film exposed in inductively-coupled plasmas”, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2013.1, Nagoya).
Y.Nakano, M.Niibe, M.Lozac’h, L.Sang, M.Sumiya: “Deep level investigation of thick InGaN films”, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2013.1, Nagoya).
K.Nakamura, M.Chen, Y.Nakano, H.Sugai: “In-situ Photoluminescence Measurements of GaN Films Exposed to Inductively-Coupled Plasmas”, 34th International Symposium on Dry Process (2012.11, Tokyo).
R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, A.Takeichi, K.Tominaga, T.Mukai: “Damage Characteristics of p-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas”, 34th International Symposium on Dry Process (2012.11, Tokyo).
K.Nakamura, M.Chen, Y.Nakano, H.Sugai: “In-situ Monitoring of Surface Modification of GaN Films Exposed to Inductively-Coupled Plasmas”, 65th Annual Gaseous Electronics Conference (2012.10, USA)
Y.Nakano: “Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures (invited)”, 11th International Symposium on Advanced Technology (2012.10, Tokyo).
M.Sumiya, A.Uedono, Y.Nakano, T.Honda: “Potential of III-V Nitride Films for the Application to Photovoltaic Device (invited)”, 11th International Symposium on Advanced Technology (2012.10, Tokyo).
M.Niibe, T.Kotaka, K.Sano, R.Kawakami, K.Tominaga, Y.Nakano: “Etching Damage Analysis of TiO2 thin film with Soft X-ray Absorption Spectroscopy”, 25th International Conference on Atomic Collisions in Solids (2012.10, Kyoto).
Y.Nakano, K.Nakamura, M.Niibe, R.Kawakami, N.Ito, T.Kotaka, K.Tominaga: “Effect of UV irradiation on Ar-plasma etching of GaN”, International Workshop on Nitride Semiconductors 2012 (2012.10, Sapporo).
Y.Nakano, M.Lozac’h, L.Sang, M.Sumiya: “Electrical investigation of band-gap states in thicker InGaN films”, International Workshop on Nitride Semiconductors 2012 (2012.10, Sapporo).
Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: “Correlation between turn-on recovery characteristics and deep-level defects in AlGaN/GaN hetero-structures”, International Workshop on Nitride Semiconductors 2012 (2012.10, Sapporo).
R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, T.Shirahama, T.Yamada, K.Tominaga: “Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas”, 11th Asia Pacific Conference on Plasma Science and Technology and 25th Symposium on Plasma Science for Materials (2012.10, Kyoto).
M.Sumiya, L.Sang, M.Lozac’h, Y.Nakano: “Growth and deep level defect evaluation of InGaN films for the application of photovoltaic devices”, 4th International Symposium on Growth of III-Nitrides (2012.7, Russia).
M.Chen, K.Nakamura, Y.Nakano, H.Sugai: “In-situ photoluminescence monitoring of GaN in plasma exposure”, 4th International Conference on Microelectronics and Plasma Technology (2012.7, Korea).
M.Lozac’h, Y.Nakano, L.Sang, K.Sakoda, M.Sumiya: “Schottky properties enhanced by using compensated Mg doped InGaN thin films material at interface metal-InGaN”, 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2012.3, Kasugai).
Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: “Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures”, 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2012.3, Kasugai).
M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Inaoka, K.Tominaga, T.Mukai: “Damage Analysis of n-GaN Crystals Etched with He and N2 Plasma”, 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2012.3, Kasugai).
M.Chen, K.Nakamura, Y.Nakano, H.Sugai: “In-situ observation of optical fluorescence of GaN thin film induced by photoluminescence technique in plasma condition”, 4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2012.3, Kasugai).
Y.Nakano, R.Kawakami, M.Niibe, A.Takeichi, T.Inaoka, K.Tominaga: “Photoluminescence Study of Plasma-Induced Etching Damages in GaN”, Materials Research Society 2011 Fall Meeting (2011.11, USA).
Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, and H.Kawai: “Steady-State Photo-capacitance Spectroscopy Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions”, Materials Research Society 2011 Fall Meeting (2011.11, USA).
Y.Guo, Q.Yang, J.Zhang, D.Wang, Y.Nakano, H.Sugai, K. Nakamura, J.Shi: “In situ monitoring damage density of GaN substrate surface in ICP containing energetic electrons”, The 20th International Symposium on Plasma Chemistry (2011.7, USA).
Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, and H.Kawai: “Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Photo-Capacitance Spectroscopy”, 9th International Conference on
Nitride Semiconductors (2011.7, UK).
M.Lozac’h, Y.Nakano, K.Sakoda and M.Sumiya: “Properties of III-V nitride thin film Schottky solar cells using transparent conductive polymer”, 5th Asia-Pacific Workshop on Widegap Semiconductors (2011.5, Toba).
J.S.Gao, T.Kondou, N.Ito, Y.Nakano, K.Naamura, H.Sugai: “Generation of High Energy Electron Beams and Its Application for Cathode Luminescence Measurements of Gallium Nitride Semiconductor in Inductively-Coupled Plasmas”, 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2011.3, Nagoya).
N.Ito, J.Gao, Y.Nakano, K.Nakamura, H.Sugai: “Photoluminescence Study of Plasma-Induced Damage in GaN”, 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2011.3, Nagoya).
Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: “Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Photo-Capacitance Spectroscopy”, 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2011.3, Nagoya).
J.S.Gao, T.Kondou, N.Ito, Y.Nakano, K.Nakamura, H.Sugai: “Generation of High Energy Electron Beams and Its Application for Cathode Luminescence Measurements of Gallium Nitride Semiconductor in Inductively-Coupled Plasmas”, 4th International Conference on Plasma-NanoTechnology & Science (2011.3, Takayama).
Y.Nakano: “Deep-Level Optical Spectroscopy Investigation of Intrinsic Degradation in Alq3- and Alq3:Qd-Based OLEDs”, Materials Research Society 2010 Fall Meeting (2010.11, USA).
Y.Nakano, N.Matsuki, M.Lozac’h, K.Sakoda, M.Sumiya: “Deep-Level Optical Characterization of Free-Standing HVPE GaN Substrates and MOCVD GaN films Using Transparent Conductive Polyaniline Schottky Contacts”, Materials Research Society 2010 Fall Meeting (2010.11, USA).
Y.Nakano, Y.Irokawa, Y.Sumida, H.Kawai: “Current Collapses in AlGaN/GaN Hetero-structures Studied by Deep-level Optical Spectroscopy”, Materials Research Society 2010 Fall Meeting (2010.11, USA).
K.Nakamura, Y.Guo, J.Gao, Y.Nakano, H.Sugai: “Optical Luminescence of GaN Thin Films Induced by High Energy Electrons in Inductively-Coupled Plasmas”, The 32nd International Symposium on Dry Process (2010.11, Tokyo).
K.Nakamura, Y.Guo, J.Gao, Y.Nakano, H.Sugai: “Irradiation of High Energy Electrons onto GaN Thin Films and Observation of its Optical Luminescence in Inductively-Coupled Plasmas”, 7th International Conference on Reactive Plasmas/ 63rd Gaseous Electronics Conference/ 28th Symposium on Plasma Processing (2010.10, France).
Y.Nakano, N.Matsuki, Y.Irokawa, Masatomo Sumiya: “Deep-Level Characterization of n-GaN Using Transparent Polyaniline Schottky Contacts”, The Third International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2010.6, Toyama).
Y.Nakano: “Deep-Level Optical Spectroscopy Study of Intrinsic Degradation in Alq3- and Alq3:Qd-Based Organic Light-Emitting Diodes”, The Third International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2010.6, Toyama).
N.Matsuki, Y.Nakano, Y.Irokawa, M.Sumiya: “Heterointerface Properties of Novel Hybrid Solar Cells consisting of Transparent Conductive Polymers and III-Nitride Semiconductor”, The International Conference on Nanophotonics 2010 (2010.5, Tsukuba).
Y.Guo, K.Nakamura, J.Shi, J.Zhang, Y.Nakano, H.Sugai: “Influence of High-Energy Secondary Electrons in Plasma Immersion Ion Implantation”, 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2010.3, Nagoya).
Y.Nakano, N.Matsuki, Y.Irokawa, M.Sumiya: “Deep-Level Optical Spectroscopy Study of Band Gap States in n-GaN Epilayers Using Transparent Polyaniline Schottky Contacts”, 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (2010.3, Nagoya).
Y.Nakano, S.Saeki, T.Morikawa: “Optical bandgap widening of p-type Cu2O films by nitrogen doping”, Materials Research Society 2009 Fall Meeting (2009.11, USA).
Y.Nakano, K.Nakamura, Y.Irokawa, M.Takeguchi: “Deep-Level Optical Spectroscopy Study of Interface States in AlGaN/GaN Hetero-Structure”, Materials Research Society 2009 Fall Meeting (2009.11, USA).
Y.Nakano: “Degradation in Alq3-Based OLEDs Studied by Deep-Level Optical Spectroscopy”, Materials Research Society 2009 Fall Meeting (2009.11, USA).
Y.Nakano, K.Nakamura, Y.Irokawa, M.Takeguchi: “Interface States in AlGaN/GaN hetero-structure Probed by Deep-level Optical Spectroscopy”, 8th International Conference on Nitride Semiconductors (2009.10, Korea).
Y.Irokawa,M. Matsuki, M.Sumiya, Y.Sakuma, Y.Sumida, Y.Nakano: “Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen”, 8th International Conference on Nitride Semicon6ductors (2009.10, Korea).
Y.Nakano, N.Matsuki, Y.Irokawa, M.Sumiya: “Deep-Level Optical Spectroscopy Investigation of Band Gap States in n-GaN Epilayers Using Transparent Polyaniline Schottky Contacts”, 8th International Conference on Nitride Semiconductors (2009.10, Korea).
Y.Nakano, K.Nakamura, Y.Irokawa, M.Takeguchi: “Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy”, 13th International Conference on Defects – Recognition, Imaging and Physics in Semiconductors (2009.9, USA).
Y.Nakano: “Deep-Level Optical Spectroscopy Investigation of Degradation in Alq3-Based OLEDs”, 13th International Conference on Defects – Recognition, Imaging and Physics in Semiconductors (2009.9, USA).
Y.Nakano, K.Nakamura, Y.Irokawa, M.Takeguchi: “Band Gap States in AlGaN/GaN Hetero-Interface Probed by Deep-Level Optical Spectroscopy”, 8th Topical Workshop on Heterostructure Microelectronics (2009.8, Nagano).
Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa: “Interfacial Electronic States in Alq3/α-NPD-Based Organic Light-Emitting Diodes Studied by Deep-Level optical Spectroscopy”, 12th International Conference on Defects – Recognition, Imaging and Physics in Semiconductors (2007.9, Germany).
Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa: “Deep-Level Characterization of Tris(8-Hydroxyquiniline) Aluminum with and without Quinacridone Doping”, 12th International Conference on Defects – Recognition, Imaging and Physics in Semiconductors (2007.9, Germany) .
Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa: “Deep-Level Optical Spectroscopy Investigation of Interfacial Trap States in Alq3/α-NPD-Based Organic Light-Emitting Diodes”, 2007 International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (2007.6, Nagano).
T.Ohwaki, T.Morikawa, K.Aoki, K.Suzuki, T.Ito, R.Asahi, Y.Nakano, Y.Oota, Y.Mitsubori: “Fundamentals and Applications of Visible-Light Photocatalyst”, Materials Research Society 2006 Fall Meeting (2006.11, USA).
Y.Nakano, T.Morikawa, T.Ohwaki: “Visible-Light Sensitivity for N-Doped ZnO Films Prepared by Reactive Magnetron Sputtering”, Materials Research Society 2006 Fall Meeting (2006.11, USA).
Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa, T.Ohwaki: “Deep-Level Optical Spectroscopy Investigation of Trap Levels in Tris(8-Hydroxyquiniline) Aluminum”, Materials Research Society 2006 Fall Meeting (2006.11, USA)
Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa, T.Ohwaki: “Deep-Level Characterization of Tris(8-Hydroxyquinoline) Aluminum with and without Quinacridone Doping”, 2006 International Conference on Solid State Devices and Materials (2006.9, Yokohama).
Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: “Band-Gap Narrowing of TiO2 Films Induced by N Doping”, 23rd International Conference on Defects in Semiconductors (2005.7, Hyogo).
Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: “Deep-Level Optical Spectroscopy Investigation of N-Doped TiO2”, 4th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (2005.4, Tokyo). /invited/
Y.Irokawa, Y.Nakano, M.Ishiko, T.Kachi, J.Kim, F.Ren, B.P.Gila, A.H.Onstine, C.R.Abernathy, S.J.Pearton, C.-C.Pan, G.-T.Chen, J.-I.Chyi: “GaN Enhancement Mode Metal-Oxide Semiconductor Field Effect Transistors”, International Workshop on Nitride Semiconductors 2004 (2004.4, USA).
Y.Nakano, T.Kachi, T.Jimbo: “N-Type Implantation Doping of GaN”, 10th International Conference on Silicon Carbide and Related Materials (2003.10, France).
Y.Nakano, T.Kachi, T.Jimbo: “P-Type Implantation Doping of GaN”, 10th International Conference on Silicon Carbide and Related Materials (2003.10, France).
Y.Nakano, T.Kachi, T.Jimbo: “Thermally Oxidized GaN Metal-Oxide-Semiconductor Structures”, 10th International Conference on Silicon Carbide and Related Materials (2003.10, France).
Y.Nakano, T.Kachi, T.Jimbo: “Be+O Co-Implantation into GaN for P-Type Doping”, 5th International Conference on Nitride Semiconductors (2003.5, Nara).
Y.Nakano, T.Kachi, T.Jimbo: “Interface Properties of Thermally Oxidized n-GaN MOS Structures”, 5th International Conference on Nitride Semiconductors (2003.5, Nara).
Y.Nakano, T.Kachi, T.Jimbo: “Defects in N/Ge and N/Si Co-Implanted GaN”, 1st International Symposium on Point Defect and Nonstoichiometry (2003.3, Sendai).
Y.Nakano, T.Jimbo: “Electrical Characterization of Acceptor Levels in Mg-Doped GaN”, International Workshop on Nitride Semiconductors 2002 (2002.7, Germany).
Y.Nakano, T.Jimbo: “Inversion Behavior in SiO2/n-GaN Metal-Insulator-Semiconductor Structures”, International Workshop on Nitride Semiconductors 2002 (2002.7, Germany).
Y.Nakano, T.Kachi, T.Jimbo: “Doping Characteristics and Structural Defects in N/Ge Co-Implanted in GaN”, 28th International Symposium on Compound Semiconductors (2001.9, Tokyo).
Y.Nakano, T.Kachi, T.Jimbo: “N/Ge Co-Implantation into GaN for N-Type Doping”, International Conference on Solid State Devices and Materials 2001 (2001, Tokyo).
T.Kachi, Y.Nakano: “Effect of N/Ge Sequential Implantation on the Ge Activation in GaN”, 4th International Conference on Nitride Semiconductors (2001, USA).
Y.Nakano, T.Kachi, H.Tadano, R.K.Malhan, “Effect of C/B Co-Implantation on the B Acceptors in 4H-SiC”, Materials Research Society 2000 Fall Meeting (2000, USA).