学術論文 （2000～）
M.Sumiya, H.Fujikura, Y.Nakano, S.Yashiro, Y.Koide, T.Honda: “Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods”, Journal of Crystal Growth 635 (2024) 127701.
R.KAwakami, Y.Makino, S.Yanagiya, A.Shirai, M. Niibe, Y.Nakano: “Plasma-assisted annealing of Pt-doped rutile TiO2 nanoparticles for enhanced decomposition and bacterial inactivation under general lighting”, J. Vac. Sci. Technol. B 42, 012203 (2024).
R.Kawakami, Y.Mimoto, S.Yanagiya, A.Shirai, M.Niibe, Y.Nakano, T.Mukai: “Photocatalytic Activity Enhancement of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles Annealed with Low-Temperature O2 Plasma”, Physca Status Solidi A 218, 2100536 (2021).
R.Kawakami, Y.Yoshitani, A.Shirai, S.Yanagiya, H.Koide, Y.Mimoto, K.Kajikawa, M.Niibe, Y.Nakano, C.Azuma, T.Mukaie: “Effects of nonequilibrium atmospheric-pressure O2 plasma-assisted annealing on anatase TiO2 nanoparticles”, Applied Surface Science 526, 146684, (2020).
R.Kawakami, Y.Yoshitani, K.Mitani, M.Niibe, Y.Nakano, C.Azuma, T.Mukai: “Effects of air-based nonequilibrium atmospheric pressure plasma jet treatment on characteristics of polypropylene film surfaces”, Applied Surface Science 509, 144910 (2020).
M.Kato, N.Ichikawa, Y.Nakano:”Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates”, Materials Letters 254, 96–98 (2019).
N.Yamada, Y.Kondo, X.Cao, Y.Nakano: “Visible-blind wide-dynamic-range fast-response self-powered ultravioletphotodetector based on CuI/In-Ga-Zn-O heterojunction”, Applied Materials Today 15, 153–162 (2019).
R.Kawakami, M.Niibe, Y.Nakano, S.Yanagiya, Y.Yoshitani, C.Azuma, T.Mukai: “Effects of ultraviolet wavelength and intensity on AlGaN thin film surfaces irradiated simultaneously with CF4 plasma and ultraviolet”, Vacuum 159, 45-50 (2019).
R.Kawakami, M.Niibe, Y.Nakano, Y.Araki , Y.Yoshitani, C.Azuma, T.Mukai: “Characteristics of TiO2 thin films surfaces treated by O2 plasma in dielectric barrier discharge with the assistance of external heating”, Vacuum 152, 265-271 (2018).
Y.Nakano, R.Kawakami, M.Niibe: “Generation of electrical damage in n-GaN films following treatment in a CF4 plasma”, Applied Physics Express 10, 116201 (2017).
Y.Nakano: “Deep-level defects in homoepitaxial p-type GaN”, Journal of Vacuum Science & Technology A 36, 023001 (2018).
Y.Nakano: “Electrical Investigation of Turn-On Capacitance Recovery Characteristics in Carbon-Doped AlGaN/GaN Hetero-Structures
Grown on Si Substrates”, ECS Journal of Solid State Science and Technology 6, P828-P831 (2017).
R.Kawakami, M.Niibe, Y.Nakano, R.Tanaka, C.Azuma, T.Mukai: “Characteristics of N2 and O2 Plasma-Induced Damages on AlGaN Thin Film Surfaces”, Physica Status Solidi A 214, 1700393 (2017).
Y.Nakano: “Electrical Characterization of β-Ga2O3 Single Crystal Substrates”, ECS Journal of Solid State Science and Technology 6, P615-P617 (2017).
M.Sumiya, N.Toyomitsu, Y.Nakano, J.Wang, Y.Harada, L.Sang, T.Sekiguchi, T.Yamaguchi, T.Honda: “Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates”, APL MATERIALS 5, 016105 (2017).
R.Kawakami, M.Niibe, Y.Nakano, T.Mukai: “AlGaN surfaces etched by CF4 plasma with and without the assistance of near-ultraviolet irradiation”, Vacuum 136, 28-35 (2017).
M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Mukai: “Damage Characteristics of n-GaN Crystal Etched with N2 Plasma by Soft X-Ray
Absorption Spectroscopy”, e-Journal of Surface Science and Nanotechnology 14, 9-13 (2016).
S.Hirai, M.Niibe, R.Kawakami, T.Shirahama, Y.Nakano, T.Mukai: “Surface Analysis of AlGaN Treated with CF4 and Ar Plasma Etching”, e-Journal of Surface Science and Nanotechnology 13, 481-487 (2015).
R.Kawakami, M.Niibe, Y.Nakano, T.Shirahama, S.Hirai, T.Mukai: “Comparison between AlGaN surfaces etched by carbon tetrafluoride
and argon plasmas: Effect of the fluorine impurities incorporated in the surface”, Vacuum 119, 264-269 (2015).
Y.Nakano, Y.Irokawa, M.Sumiya: “Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures”, Philosophical Magazine Letters 95, 333-339 (2015).
Y.Nakano, D.Ogawa, K.Nakamura, R.Kawakami, M.Niibe: “Ar+-irradiation-induced damage in hydride vapor-phase epitaxy GaN films”, Journal of Vacuum Science & Technology A 33, 043002 (2015).
K.Sano, M.Niibe, R.Kawakami, Y.Nakano: “Recovery of x-ray absorption spectral profile in etched TiO2 thin films”, Journal of Vacuum Science & Technology A 33, 031403 (2015).
M.Chen, Y.Qiua, S.Yua, Y.Nakano, K.Nakamura: “A comparative study on GaN luminescence under/after inductively coupled plasma exposure”, Philosophical Magazine Letters 95, 161-167 (2015).
R.Kawakamia, Y.Nakano, M.Niibe, T.Shirahama, T.Mukai: “Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments”, ECS Solid State Letters 4(4), 36-38 (2015).
M.Sumiya, T.Honda, L.Sang, Y.Nakano, K.Watanabe, F.Hasegawa: “Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate”, Physica Status Solidi A, 1–6 (2015). / DOI 10.1002/pssa.201431732
M.Chen, Y.Qiua, S.Yua, Y.Nakano, K.Nakamura: “In situ measurement of GaN film photoluminescence under plasma etching”, Philosophical Magazine Letters 94(12), 772-778 (2014).
M.Chen, K.Nakamura, Y.Qiu, D.Ogawa, R.Kawakami, M.Niibe, Y.Nakano: “Optical and electrical investigation of Ar+-irradiated GaN”, Applied Physics Express 7, 111003 (2014).
R.Kawakami, M.Niibe, Y.Nakano, T.Shirahama, K.Aoki, K.Oba, M.Takabatake, T.Mukai: “Damage characteristics of n-GaN thin film surfaces etched by ultraviolet light-assisted helium plasmas”, Thin Solid Films 570, 81–86 (2014).
森川健志, 佐伯周, 荒井健男, 中野由崇:「二酸化炭素の光還元を目指した可視光応答性半導体の創製」, Electrochemistry 82, 502-506 (2014). /招待論文/
X.Huang, Y.Guo, J.Zhang, Y.Nakano, H.Sugai, K.Nakamura: “In situ monitoring of GaN substrate surface in ICP containing energetic electrons”, Applied Surface Science Volume 292, 387–389 (2014).
M.Chen, K.Nakamura, Y.Nakano, Y.Qiu, Z.Jiao: “Photoluminescence of n-type GaN film in an argon plasma”, Philosophical Magazine: Letters 94, 182-187 (2014).
R.Kawakami, M.Niibe, Y.Nakano, T.Shirahama, T.Yamada, K.Aoki, M.Takabatake, K.Tominaga, T.Mukai:”Damage characteristics of n-GaN thin film surfaces etched by N2 plasmas”, Physica Status Solidi C 10, 1553–1556 (2013).
R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, A.Takeichi, K.Tominaga, T.Mukai: “Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas”, Japanese Journal of Applied Physics 52, 05EC05 (2013).
M.Niibe, K.Sano, T.Kotaka, R.Kawakami, K.Tominaga, Y.Nakano: “Etching Damage and Its Recovery by Soft X-ray Irradiation Observed in Soft X-ray Absorption Spectra of TiO2 Thin Film”, Journal of Applied Physics 113, 126101 (2013).
M.Lozac’h, Y.Nakano, L.Sang, K.Sakoda, M.Sumiya: “Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defects evaluation under light irradiation”, Physica Status Solidi (a) 210, 470-473 (2013). [front cover design]
Y.Nakano, K.Nakamura, M.Niibe, R.Kawakami, N.Ito, T.Kotaka, K.Tominaga: “Effect of UV Irradiation on Ar-Plasma Etching Characteristics of GaN”, ECS Journal of Solid State Science and Technology 2, 110-113 (2013).
M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Inaoka, K.Tominaga, T.Mukai: “Damage Analysis of n-GaN Crystal Etched with He and N2 Plasma”, Japanese Journal of Applied Physics 52, 01AF04 (2013).
Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: “Correlation between deep-level defects and turn-on recovery Characteristics in AlGaN/GaN hetero-structures”, Journal of Applied Physics 112, 106103 (2012).
M.Lozac’h, Y.Nakano, L.Sang, K.Sakoda, M.Sumiya: “Study of Defect Levels in Band Gap for Thicker InGaN Film”, Japanese Journal of Applied Physics 51, 121001 (2012).
M.Chen, K.Nakamura, Y.Nakano, S.Yu, H.Sugai: “In-situ photoluminescence monitoring of GaN in plasma exposure”, Applied Physics Letters 101, 071105 (2012).
M.Chen, K.Nakamura, Y.Nakano, G.Zhang, H.Sugai: “In-situ Probe of GaN Film Surfaces under Plasma Conditions by Photoluminescence Technique”, Applied Physics Express 5, 076201 (2012).
Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: “Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures”, Electrochemical and Solid-State Letters 15(2), 44-47 (2011).
Y.Nakano, M.Lozac’h, N.Matsuki, K.Sakoda, M.Sumiya: “Photo-capacitance spectroscopy study of deep-level defects in free-standing n-GaN substrates using transparent conductive polymer Schottky contacts”, Journal of Vaccum Science and Technology B 29, 023001 (2011).
Y.Guo, K.Nakamura, J.Zhang, Y.Nakano, H.Sugai: “Influence of High-Energy Secondary Electrons in Plasma Immersion Ion Implantation”, Japanese Journal of Applied Physics 50, 01AA02 (2011).
Y.Nakano, N.Matsuki, Y.Irokawa, M.Sumiya: “Deep-Level Characterization of n-GaN Epitaxial Layers using Transparent Conductive Polyanikine Schottky Contacts”, Japanese Journal of Applied Physics 50, 01AD02 (2011).
N.Matsuki, Y.Irokawa, Y.Nakano, M.Sumiya: “π-conjugated polymer/GaN Schottky solar cells”, Solar Energy Materials & Solar Cells 95, 284-287 (2011).
N.Matsuki, Y.Nakano, Y.Irokawa, M.Sumiya: “Heterointerface Properties of Novel Hybrid Solar Cells Consisting of Transparent Conductive Polymer and III-Nitride Semiconductor”, Journal of Nonlinear Optical Physics & Materials 19(4) 703-711 (2010).
Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai: “Photo-Capacitance Spectroscopy Investigation of Deep-Level Defects in AlGaN/GaN hetero- structures with different current collapses”, physica status solidi (Rapid Research Letters 4, 374-376 (2010).
Y.Nakano: “Deep-Level Optical Spectroscopy Investigation of Degradation Phenomena in Tris(8-hydroxy quinoline) Aluminum-Based Organic Light-Emitting Diodes”, Applied Physics Express 2, 092103 (2009).
Y.Irokawa, N.Matsuki, M.Sumiya, Y.Sakuma, T.Sekiguchi, T.Chikyo, Y.Sumida, Y.Nakano: “Low-Frequency Capacitance-Voltage Study of Hydrogen Interaction with Pt-AlGaN/GaN Schottky Barrier Diodes”, Physica Status Solidi (Rapid Research Letters) 3, 266-268 (2009).
Y.Nakano, S.Saeki, T.Morikawa: “Optical bandgap widening of p-type Cu2O films by nitrogen doping”, Applied Physics Letters 94, 022111 (2009).
Y.Nakano, Y.Irokawa, M.Takeguchi: “Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces”, Applied Physics Express 1, 091101 (2008).
Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa: “Emissive Interface States in Organic Light-Emitting Diodes Based on Tris(8-Hydroxyquinoline) Aluminum”, Japanese Journal of Applied Physics 47(1), 464 (2008).
A.Uedono, K.Ito, H.Nakamori, K.Mori, Y.Nakano, T.Kachi, S.Ishibashi, T.Ohdaira, R.Suzuki: “Annealing Properties of Vacancy-Type Defects in Ion-Implanted GaN Studied by Monoenergetic Positron Beams”, Journal of Applied Physics 102, 084505 (2007).
Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa: “Deep-Level Characterization of Emissive Interface States in Alq3-Based OLEDs”, physica status solidi (Rapid Research Letters) 1, 196 (2007).
Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: “Origin in Visible-Light Sensitivity in N-Doped TiO2 Films”, Chemical Physics 339, 20 (2007). /invited/
Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa, T.Ohwaki, Y.Taga: “Deep-Level Characterization of Tris(8-Hydroxyquinoline) Aluminum with and without Quinacridone Doping”, Japanese Journal of Applied Physics 46(4B), 2636 (2007).
Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa, T.Ohwaki, Y.Taga: “Trap Levels in Tris(8-Hydroxyquinoline) Aluminum Studied by Deep-Level Optical Spectroscopy”, Applied Physics Letters 88, 252104 (2006).
Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: “Electrical Characterization of p-Type N-Doped ZnO Films Prepared by Thermal Oxidation of Sputtered Zn3N2 Films”, Applied Physics Letters 88, 172103 (2006).
Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: “Deep-Level Characterization of N-Doped ZnO Films Prepared by Reactive Magnetron Sputtering”, Applied Physics Letters 87, 232101 (2005).
Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: “Electrical Characterization of Band Gap States in C-Doped TiO2 Films”, Applied Physics Letters 87, 052111 (2005).
Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: “Deep-Level Optical Spectroscopy Investigation of N-Doped TiO2 Films”, Applied Physics Letters 86, 132104 (2005).
Y.Irokawa, O.Fujishima, T.Kachi, Y.Nakano: “Electrical Activation Characteristics of Silicon-Implanted GaN”, Journal of Applied Physics 97, 083505 (2005).
Y.Nakano, O.Fujishima, T.Kachi, K.Abe, O.Eryu, K.Nakashima, T.Jimbo: “N-Type Doping Characteristics of O-Implanted AlGaN”, Journal of The Electrochemical Society 151, G801 (2004).
Y.Nakano, O.Fujishima, T.Kachi: “Effect of Activation Ambient on Acceptor Levels in Mg-Doped GaN”, Journal of Applied Physics 96, 415 (2004).
Y.Nakano, O.Fujishima, T.Kachi: “High-Temperature Annealing Behavior of p-Type Doping Characteristics in Mg-Doped GaN”, Journal of The Electrochemical Society 151, G574 (2004).
Y.Irokawa, Y.Nakano, M.Ishiko, T.Kachi, J.Kim, F.Ren, B.P.Gila, A.H.Onstine, C.R.Abernathy, S.J.Pearton, C.-C.Pan, G.-T.Chen, and J.-I.Chyi: “MgO/p-GaN Enhancement Mode Metal-Oxide-Semiconductor”, Applied Physics Letters 84, 2919 (2004).
中野, 土屋, 坂田: 「CVD法と熱処理で作製した多結晶Si膜の粒界物性評価」, 電気学会論文誌E 142, 14 （2004）.
Y.Nakano, T.Kachi, T.Jimbo: “N-Type Doping Characteristics of O-Implanted GaN”, Journal of Vacuum Science and Technology B 21, 2602 (2003).
Y.Nakano, T.Kachi, T.Jimbo: “Characteristics of SiO2/n-GaN Interfaces with b-Ga2O3 Interlayers”, Applied Physics Letters 83, 4336 (2003).
Y.Nakano, T.Kachi, T.Jimbo: “Inversion Behavior in Thermally Oxidized p-GaN Metal-Oxide-Semiconductor Capacitors”, Journal of Vacuum Science and Technology B 21, 2220 (2003).
Y.Nakano, T.Kachi, T.Jimbo: “Electrical Properties of Thermally Oxidized p-GaN Metal-Oxide-Semiconductor Diodes”, Applied Physics Letters 82, 2443 (2003).
Y.Nakano, T.Kachi, T.Jimbo: “Effect of Be++O+ Co-Implantation on Be Acceptors in GaN”, Applied Physics Letters 82, 2082 (2003).
Y.Nakano, T.Jimbo: “Electrical Properties of SiO2/n-GaN Metal-Insulator-Semiconductor Diodes”, Journal of Vacuum Science and Technology B 21, 1364 (2003).
Y.Nakano, T.Jimbo: “Interface Properties of Thermally Oxidized n-GaN Metal-Oxide-Semiconductor Capacitors”, Applied Physics Letters 82, 218 (2003).
Y.Nakano, T.Jimbo: “Electrical Characterization of Acceptor Levels in Be-Implanted GaN”, Applied Physics Letters 81, 3990 (2002).
Y.Nakano, T.Jimbo: “Electrical Characterization of Acceptor Levels in Mg-Doped GaN”, Journal of Applied Physics 92, 5590 (2002).
Y.Nakano, M.Ishiko, H.Tadano: “Deep Level Centers in Silicon Introduced by High-Energy He Irradiation and Subsequent Annealing”, Journal of Vacuum Science and Technology B 20, 379 (2002).
Y.Nakano, T.Jimbo: “Structural Defects and Electrical Properties of N/Ge Co-Implanted GaN”, Defect and Diffusion Forum 206-207, 75-85 (2002). /invited/
Y.Nakano, T.Jimbo: “Co-Implantation of Si+N into GaN for N-Type Doping”, Journal of Applied Physics 92, 3815 (2002).
Y.Nakano, T.Kachi, T.Jimbo: “N/Ge Co-Implantation into GaN for N-Type Doping”, Japanese Journal of Applied Physics 41, 2522 (2002).
Y.Nakano, T.Jimbo: “Interface Properties of SiO2/n-GaN Metal-Insulator-Semiconductor Structures”, Applied Physics Letters 80, 4756 (2002).
Y.Nakano, T.Kachi: “Defects in N/Ge Coimplanted GaN Studied by Positron Annihilation”, Journal of Applied Physics 91, 884 (2002).
Y.Irokawa, Y.Nakano: “Observation of Inversion Behavior in N-Type GaN Planar Metal-Insulator-Semiconductor Capacitor”, Solid-State Electronics 46, 1467 (2002).
Y.Nakano, T.Kachi: “Current Deep-Level Transient Spectroscopy Investigation of Acceptor Levels in Mg-Doped GaN”, Applied Physics Letters 79, 1631 (2001).
Y.Nakano, R.K.Malhan, T.Kachi, H.Tadano: “Effect of C and B Sequential Implantation on the B Acceptors in 4H-SiC”, Journal of Applied Physics 89, 5961 (2001).
Y.Nakano, T.Kachi: “Effect of N/Ge Co-Implantation on the Ge Activation in GaN”, Applied Physics Letters 79, 1468 (2001).
Y.Nakano, M.Ishiko, H.Tadano, U.Myler, P.Simpson: “Thermal Behavior of He-Irradiated Defects in Silicon”, Journal of Crystal Growth 210, 80 (2000).
国際会議プロシーディングス （2000～）
Y.Makino, A.Shirai, S.Yanagiya, M.Niibe, Y.Nakano, R.Kawakami: “Bacterial Inactivation of Pt-doped Rutile TiO2 Nanoparticles Annealed with Low-Temperature O2 Plasma”, Proceedings of International Symposium of Dry Process 2023, 173-174 (2023).
T.Matsumoto, S.Yanagiya, M.Niibe, Y.Nakano, R.Kawakami : “Photocatalytic Activity Enhancement of Titanium Dioxide Nanoparticles via High-Pressure Annealing with Polyethylene Glycol”, Proceedings of International Symposium of Dry Process 2023, 155-156 (2023).
A.Ichimura, S.Yanagiya, M.Niibe, Y.Nakano, R.Kawakami : “Photocatalytic Activity of g-C3N4 Nanosheets Grown by High-Pressure Annealing”, Proceedings of International Symposium of Dry Process 2023, 157-158 (2023).
Y.Miyaji, T.Matsumoto, S.Yanagiya, M.Niibe, Y.Nakano, R.Kawakami : “Photocatalytic Characteristics of TiO2/Au/TiO2/Au Stacked Nanostructure Induced by Ultraviolet and Visible light Irradiation”, Proceedings of International Symposium of Dry Process 2023, 125-126 (2023).
Y.Makino, R.Kawakami, S.Yanagiya, M.Niibe, Y.Nakano, Takashi Mukai : “Atmospheric-Pressure Low-Temperature O2 Plasma-Assisted Annealing on Visible-Light-Induced Photocatalytic Activity of Pt-doped Rutile TiO2 Nanoparticles”,
Proceedings of International Symposium of Dry Process 2022, 125-126 (2022).
T.Matsumoto, R.Kawakami, S.Yanagiya, M.Niibe, Y.Nakano, T.Mukai : “Polyethylene Glycol Doping Effects on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles”, Proceedings of International Symposium of Dry Process 2022, 101-102 (2022).
Y.Mimoto, R.Kawakami, S.Yanagiya, M.Niibe, Y.Nakano, T.Mukai : “Nonequilibrium Atmospheric-Pressure O2 Plasma-Assisted Annealing Effect on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles”, Proceedings of International Symposium of Dry Process 2021, 131-132 (2021).
R.Kawakami, Y.Mimoto, A.Shirai, S.Yanagiya, M.Niibe, Y.Nakano, T.Mukai : “Photobactericidal Activity of Anatase Titanium Dioxide Nanoparticles Annealed with the Assistance of Nonequilibrium Atmospheric-Pressure Oxygen Plasma”,
Proceedings of International Symposium of Dry Process 2021, 127-128 (2021).
R.Kawakami, H.Koide, Y.Yoshitani, S.Yanagiya, T.Okamoto, M.Haraguchi, A.Furube, M.Niibe, Y.Nakano, C.Azuma, T.Mukai: “Photocatalytic Characteristics of Au/TiO2/Au Nanostructure Induced by Ultraviolet Irradiation”, Proceedings of 15th International Symposium of Sputtering & Plasma Processes, 146-148 (2019).
Y.Yuki, R.Kawakami, H.Koike, N.Takami, M.Niibe, Y.Nakano, C.Azuma, T.Mukai: “Effect of Atmospheric-Pressure O2 Plasma-Assisted Annealing on Photocatalytic Activity of TiO2 Nanoparticles”, Proceedings of International Symposium of Dry Process 2018, 255-256 (2018).
R.Kawakami, Y.Yoshitani, K.Mitani, N.Takami, H.Koide, N.Sugimoto, M.Niibe, Y.Nakano, C.Azuma, T.Mukai: “Hydrophilic Modification of Polypropylene Film Surfaces Treated by Atmospheric-Pressure Air Plasma Jet”, Proceedings of International Symposium of Dry Process 2018, 253-254 (2018).
R.Kawakami, K.Fujimoto, M.Niibe, Y.Araki, Y.Nakano, T.Mukai: “TiO2 Thin Film Surfaces Treated by O2 Plasma in Dielectric Barrier Discharge with Assistance of Heat Treatment”, Proceedings of 14th International Symposium of Sputtering & Plasma Processes, 274-277 (2017).
Y.Nakano, M.Niibe, R.Kawakami: “Electrical damage in n-GaN films treated by CF4 plasma”, Proceedings of International Symposium of Dry Process 2016, 73-74 (2016).
D.Ogawa, Y.Banno, Y.Nakano, K.Nakamura: “Damage Evolution of Gallium Nitride in Argon-Chlorine Plasma”, Proceedings of International Symposium of Dry Process 2016, 85-86 (2016).
R.Kawakami, M.Niibe, Y.Nakano, T.Mukai: ” Effect of Ultraviolet Light-Assisted CF4 Plasma Irradiation on AlGaN Thin Film Surface”, Proceedings of the 43rd International Symposium on Compound Semiconductors (ISCS2016), MoP-ISCS-096_1-MoP-ISCS-096_2, (2016).
Y.Nakano, M.Niibe, R.Kawakami: “Electrical Damage Investigation of n-GaN Films Treated by CF4 Plasma”, Proceedings of the 43rd International Symposium on Compound Semiconductors (ISCS2016), MoP-ISCS-LN-4_1-MoP-ISCS-LN-4_2, (2016).
R.Kawakami, M.Niibe, Y.Nakano, C.Azuma, T.Mukai: ” Anatase TiO2 Thin Films Grown by Facing-Target Reactive Sputtering and Its Impact on Photocatalytic Activity”, Proceedings of International Symposium of Dry Process 2015, 125-126 (2015).
R.Kawakami, M.Niibe, Y.Nakano, T.Mukai: “Comparison between Surface Characteristics of Titanium Oxide Thin Films Treated with N2 Dielectric Barrier Discharge Plasma and Annealed in N2 Gas”, Proceedings of 13th International Symposium of Sputtering & Plasma Processes, 63-66 (2015).
M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Mukai: “Etching Damage Analysis of n-GaN Crystals Etched with N2-Plasma Using Soft X-Ray Absorption Spectroscopy”,
Proceedings of International Symposium of Dry Process 2014, pp.75-76 (2014).
R.Kawakami, M.Niibe, Y.Nakano, T.Shirahama, S.Hirai, T.Mukai: “Morphological and Compositional Changes in AlGaN Surfaces Etched by RF Capacitively Coupled Carbon Tetrafluoride and Argon Plasmas”, Proceedings of International Symposium of Dry Process 2014, pp.69-70 (2014).
D.Ogawa, Y.Nakano, K.Nakamura:“Effect of Liquid Nitrogen Cooling on GaN Film Exposed in Low Pressure Plasma”, Proceedings of International Symposium of Dry Process 2014, pp.67-68 (2014).
Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai: “Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures”, Materials Research Society Symposium Proceedings 1635, MRSF13-1635-T02-08 (2014).
Yoshitaka Nakano, Liwen Sang, Masatomo Sumiya: “Electrical Characterization of Thick InGaN Films for Photovoltaic Applications”, Materials Research Society Symposium Proceedings 1635, MRSF13-1635-T06-02 (2014).
R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, H.Takeuchi, T.Shirahama, T.Yamada, T.Tominaga: “Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas”, Journal of Physics: Conference Series 441, 012038 (2013).
R.Kawakami, M.Niibe, Y.Nakano, M.Konishi, Y.Mori, A.Takeichi, K.Tominaga, T.Mukai, “Damage Characteristics of p-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas”, Proceedings of International Symposium of Dry Process 2012, 133-134 (2012).
Y.Nakano: “Correlation between Deep-Level Defects and Carrie Trapping in AlGaN/GaN Hetero-Structures”, 11th International Symposium on Advanced Technology Proceedings 107-108 (2012). /invited/
M.Sumiya, A.Uedono, Y.Nakano, T.Honda: “Potential of III-V Nitride Films for the Application to Photovoltaic Device”, 11th International Symposium on Advanced Technology Proceedings 109-110 (2012). /invited/
Y.Nakano, R.Kawakami, M.Niibe, A.Takeichi, T.Inaoka, K.Tominaga: “Photoluminescence Study of Damage Introduced in GaN by Ar- and Kr-Plasmas Etching”, Materials Research Society Symposium Proceedings 1396, 1396-o07-36 1-6 (2012).
Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, and H.Kawai: “Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions of GaN Buffer Layers”, Materials Research Society Symposium Proceedings 1396, 1396-o07-37 1-6 (2012).
Y.Nakano, M.Lozac’h, N.Matsuki, K.Sakoda, M.Sumiya: “Deep-Level Characterization of Free-Standing HVPE-grown GaN Substrates Using Transparent Conductive Polyaniline Schottky Contacts”, Materials Research Society Symposium Proceedings 1309, 1309-ee06-41 1-6 (2011).
Y.Nakano,Y.Irokawa, Y.Sumida, S.Yagi,H.Kawai: “Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy”, Materials Research Society Symposium Proceedings 1309, 1309-ee06-40 1-6 (2011).
Y.Irokawa, M.Matsuki, M.Sumiya, Y.Sakuma, T.Sekiguchi, T.Chikyo, Y.Sumida, Y.Nakano: “Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen”, physica status solidi (c) 7, 1928-1930 (2010).
Y.Nakano, N.Matsuki, Y.Irokawa, M.Sumiya: “Electrical Characterization of n-GaN Using Transparent Polyaniline Schottky Contacts”, physica status solidi (c) 7, 2007-2009 (2010).
Y.Nakano: “Intrinsic Degradation in Alq3-Based OLEDs Probed by Deep-Level Optical Spectroscopy”, Materials Research Society Symposium Proceedings Vol.1212, 1212-S03-01 (2010).
Y.Nakano, Y.Irokawa, M.Takeguchi: “Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy”, Materials Research Society Symposium Proceedings Vol.1202, 1202-I09-03 (2010).
Y.Nakano, S.Saeki, T.Morikawa: “Nitrogen-Doping Induced Optical Bandgap Widening of P-Type Cu2O Films”, Materials Research Society Symposium Proceedings Vol.1217, 1217-Y03-38 (2010).
Y.Nakano, K.Noda, H.Fujikawa, T.Morikawa, T.Ohwaki, Y.Taga: “Deep-Level Characterization of Tris(8-Hydroxyquinoline) Aluminum with and without Quinacridone Doping”, Materials Research Society Symposium Proceedings Volume 965E, S09-21 (2007). [Electronic paper]
Y.Nakano, T.Morikawa, T.Ohwaki: “Visible-Light Sensitivity in N-Doped ZnO Films Prepared by Reactive Magnetron Sputtering”, Materials Research Society Symposium Proceedings Volume 957, K07-57 (2007).
Y.Nakano, T.Morikawa, T.Ohwaki, Y.Taga: “Band-Gap Narrowing of TiO2 Films Induced by N Doping”, Physica B: Condensed Matter 376-377, 823 (2006).
Y.Irokawa, Y.Nakano, M.Ishiko, T.Kachi, J.Kim, F.Ren, B.P.Gila, A.H.Onstine, C.R.Abernathy, S.J.Pearton, C.-C.Pan, G.-T.Chen, J.-I.Chyi: “GaN Enhancement Mode Metal-Oxide Semiconductor Field Effect Transistors”, Physica Status Solidi (c) 2, 2668 (2005).
Y.Nakano, T.Kachi, T.Jimbo: “Defects in N/Ge and N/Si Co-Implanted GaN”, Materials Science in Semiconductor Processing 6, 515 (2004).
Y.Nakano, T.Jimbo: “Electrical Characterization of Acceptor Levels in Mg-Doped GaN”, Physica Status Solidi (c) 0, 438 (2002).
Y.Nakano, T.Jimbo: “Inversion Behavior in SiO2/n-GaN Metal-Insulator-Semiconductor Structures”, Physica Status Solidi (b) 234, 859 (2002).
Y.Nakano, T.Kachi, T.Jimbo: “Doping Characteristics and Structural Defects in N/Ge Co-Implanted in GaN”, Institute of Physics Conference Series No.170 Chapter 9 (2002). [CD-ROM]
Y.Nakano, T.Kachi, H.Tadano, R.K.Malhan: “Effect of C/B Co-Implantation on the B Acceptors in 4H-SiC”, Materials Research Society Symposium Proceedings 640 (2001) [CD-ROM].
Y.Nakano, T.Kachi, H.Tadano, R.K.Malhan: “Effect of C/B Sequential Implantation on the B acceptor in 4H-SiC”, Journal of Crystal Growth 210, 283 (2000).
総説・解説
Y.Nakano, A.Toyotome, R.Suzuki, Y.Yasuda, “Experimental Investigation of Oxygen-Vacancy Defects in n-Type b-Ga2O3 (010) Single Crystals”, 総合工学 33, p.1-8 (2021).
R.Tanaka, M.Niibe, R.Kawakami, Y.Nakano, T.Mukai: “Surface Structure Analysis of AlGaN thin films damaged by Oxygen and Nitrogen Plasmas”, Laboratory of Advanced Science and Technology for Industry (LASTI) Annual Report, University of Hyogo, Vol.18, p.50-52 (2016). [ISSN: 2189-6909]
Y.Araki, M.Niibe, R.KAwakami, N.Takehira, Y.Nakano: “Effect of Ultraviolet Light-Assisted CF4 Plasma Irradiation on AlGaN Thin Film Surface”, Laboratory of Advanced Science and Technology for Industry (LASTI) Annual Report, University of Hyogo, Vol.17, p.67-68 (2015). [ISSN: 2189-6909]
中野: “Electrical Characterization of Thick InGaN Films Grown by MOCVD for Photovoltaic Applications”, 中部大学 総合工学研究所 紀要 26, 1-7 (2014).
中野: “Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures Grown by MOCVD”, 中部大学 総合工学 25, 13-20 (2013).
角谷, L.Sang, 中野, 上殿: 「III-V窒化物太陽電池」, 未来材料 12, 15-20 (2012).
M.Niibe, T.Kotaka, R.Kawakami, Y.Nakano, T.Mukai: “Damage Analysis of n-GaN Etched with He and N2 Plasmas”, 兵庫県立大学 ニュースバル放射光施設 LASTI Annual Report 2011 Vol.13, 51-52 (2012).
中野: “Photoluminescence Study of Plasma Etching-Induced Damage in GaN”, 中部大学 総合工学 24, 78-83 (2012).
中野: 「光容量分光法によるAlGaN/GaNヘテロ構造における欠陥準位と電流コラプス現象の相関」, 村田学術振興財団 年報 25, 902-903 (2011).
中野: “Correlation between Current Collapse Phenomena and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Deep-Level Optical Spectroscopy”, 中部大学 総合工学 23, 16-21 (2011).
中野: 「AlGaN/GaNヘテロ接合界面のバンドギャップ内準位計測」, カシオ科学振興財団 年報, 86-87 (2010).
中野: “Intrinsic Degradation in Alq3-Based OLEDs Probed by Deep-Level Optical Spectroscopy”, 中部大学 総合工学 22, 23-29 (2010).
中野:「DLOS法による有機EL素子の発光層界面のバンド構造解析」, 中部大学 総合工学 21, 151-154 (2009).
大脇, 森川, 青木, 鈴木, 伊藤, 中野, 旭, 正木, 多賀:「窒素ドープ酸化チタンによる可視光応答型光触媒の開発」, 豊田自動織機技報 第53号, 46 (2007).
中野:「7.7.2 TiO2系透明導電膜の研究開発動向」, （財）光産業技術振興協会（OITDA） 平成18年度光技術動向調査報告書 442 (2007).
中野, 森川, 大脇, 多賀:「光触媒材料の半導体バンド構造解析について」, 光機能材料研究会 会報光触媒 第19号, 29 (2006).
中野, 井上, 土屋, 坂田, 多賀:「多結晶Si膜の粒界キャラクタリゼーション」, 豊田中央研究所 R & D レビュー Vol.34, No.1, 11 (1999).